IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3-D numerical simulation of the pseudo-MOS transistor

1997 IEEE International SOI Conference Proceedings

Author(s): Munteanu, D. ; Cristoloveanu, S. ; Guichard, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 94 - 95
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634949
Regular:

The /spl Psi/-MOSFET stands as the unique method permitting a quick and rather complete evaluation of the electrical properties of SOI wafers prior to any device processing. The aim of this paper... View More

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