IEEE - Institute of Electrical and Electronics Engineers, Inc. - CAD-compatible model for accumulation-mode (AM) SOI pMOSFETs

1997 IEEE International SOI Conference Proceedings

Author(s): Iniguez, B. ; Gentinne, B. ; Dessard, V. ; Flandre, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 92 - 93
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634948
Regular:

The models presented so far for accumulation-mode (AM) SOI MOSFETs are not very appropriate for mixed analog-digital circuit simulation, since they use different equations with abrupt transitions... View More

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