IEEE - Institute of Electrical and Electronics Engineers, Inc. - A general physical model for short-channel double-gate SOI MOSFETS

1997 IEEE International SOI Conference Proceedings

Author(s): Zheming Li ; Woo, J.C.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 86 - 87
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634945
Regular:

Previous works on the modeling of short-channel double-gate devices in the above-threshold regime were based mainly on modifying the current expressions for bulk devices. These models would... View More

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