IEEE - Institute of Electrical and Electronics Engineers, Inc. - Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects

1997 IEEE International SOI Conference Proceedings

Author(s): Kuo, J.B. ; Su, K.W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 84 - 85
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634944
Regular:

This paper presents the sidewall-related narrow channel effects on the current conduction in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. As verified by the 3D simulation results, the... View More

Advertisement