IEEE - Institute of Electrical and Electronics Engineers, Inc. - Double gate dynamic threshold voltage (DGDT) SOI MOSFETs for low power high performance designs

1997 IEEE International SOI Conference Proceedings

Author(s): Liqiong Wei ; Zhanping Chen ; Roy, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 82 - 83
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634943
Regular:

In this paper, double gate dynamic threshold voltage (DGDT) SOI MOSFETs, which combine the advantages of DTMOS and FD SOI MOSFETs without the limitation of the supply voltage, are simulated using... View More

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