IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

1997 IEEE International SOI Conference Proceedings

Author(s): Fung, S.K.H. ; Mansun Chan ; Ko, P.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 80 - 81
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634942
Regular:

This paper describes the characterization of transient floating body effect in non-fully depleted SOI MOSFETs. The front gate coupling factor (P/sub fgc/) is used as a measure of the "floating... View More

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