IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design criteria for a fully depleted-0.1 /spl mu/m SOI technology

1997 IEEE International SOI Conference Proceedings

Author(s): Burns, J.A. ; Frankel, R.S. ; Soares, A.M. ; Wyatt, P.W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 78 - 79
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634941
Regular:

A sub-0.25 /spl mu/m fully depleted silicon-on-insulator (FDSOI) technology has been developed and fully scaled ring oscillators fabricated using 193-nm lithography. This technology is... View More

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