IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-field electron velocity in thin SOI films

1997 IEEE International SOI Conference Proceedings

Author(s): Arnold, E. ; Aquino, R. ; Letavic, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 74 - 75
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634939
Regular:

Several techniques have been used in the past to measure the carrier velocity in silicon at high electric fields. Among these are the time-of-flight technique, avalanche current, and... View More

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