IEEE - Institute of Electrical and Electronics Engineers, Inc. - A manufacturable SOI CMOS process for low power digital, analog, and RF applications

1997 IEEE International SOI Conference Proceedings

Author(s): Stuber, M. ; Dennies, P. ; Lyons, G. ; Kobayashi, T. ; Domyo, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 70 - 71
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634937
Regular:

Peregrine Semiconductor's UTSi(R) technology is a silicon-on-sapphire (SOS) CMOS process with proven manufacturability for high-performance, low-power commercial CMOS applications. Data are... View More

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