IEEE - Institute of Electrical and Electronics Engineers, Inc. - Differences in the hot-carrier degradation of fully depleted n-channel MOSFETs on SIMOX/BESOI substrates

1997 IEEE International SOI Conference Proceedings

Author(s): Huttner, T. ; Mahnkopf, R. ; Wurzer, H. ; Pindl, S. ; Abstreiter, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 66 - 67
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634935
Regular:

The damaging of the buried oxide in n-channel SOI-MOSFETs during hot carrier stress has been described by several authors, Observed damaging mechanisms are hole trapping and interface state... View More

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