IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of interface traps in SOI material

1997 IEEE International SOI Conference Proceedings

Author(s): Vanheusden, K. ; Warren, W.L. ; Shedd, W.M. ; Pugh, R.D. ; Fleetwood, D.M. ; Schwank, J.R. ; Devine, R.A.B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 64 - 65
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634934
Regular:

In SOI material, the presence of interface traps at the buried oxide layer interfaces has been demonstrated from electrical data. More recently, interface defects were identified at the buried... View More

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