IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance of /spl gamma/-irradiated gate-all-around SOI MOS OTA amplifiers

1997 IEEE International SOI Conference Proceedings

Author(s): Vandooren, A. ; Francis, P. ; Flandre, D. ; Colinge, J.-P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 62 - 63
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634933
Regular:

Gate-All-Around SOI MOSFETs are very promising for the fabrication of ultra rad-hard circuits. The specific structure of the GAA device allows to combine radiation hardness and the great... View More

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