IEEE - Institute of Electrical and Electronics Engineers, Inc. - The early breakdown characteristics of thin gate oxide on SOI wafers

1997 IEEE International SOI Conference Proceedings

Author(s): Jin-Ho Seo ; Woo, J.C. ; Maszara, W. ; Vasudev, P.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 52 - 53
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634928
Regular:

The thin gate oxide (7 nm) grown on SOI substrates can be as good as grown on bulk wafer with very similar gate tunneling current characteristics, EFR, and defect density. Furthermore, the... View More

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