IEEE - Institute of Electrical and Electronics Engineers, Inc. - A model for SIMOX buried-oxide low-field conduction and trapping

1997 IEEE International SOI Conference Proceedings

Author(s): Krska, J.-H.Y. ; Yoon, J.U. ; Chung, J.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 50 - 51
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634927
Regular:

Intrinsic SIMOX buried oxide (BOX) low-field conduction and trapping, which is not due to defect-related "piping", has been previously observed for E-fields <3 MV/cm/sup 2/. However,... View More

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