IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transient response after pulsed ionizing excitation of several buried oxides in fully-depleted SOI NMOS transistors

1997 IEEE International SOI Conference Proceedings

Author(s): Rebours, Y. ; Ferlet-Cavrois, V. ; Gruber, O. ; Raynaud, C. ; Pelloie, J.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 46 - 47
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634925
Regular:

The purpose of this article is to study and compare the time-dependent response of different buried oxide (BOX) materials through the coupling effect in fully-depleted transistors. This can be... View More

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