IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of varying implant energy and dose on the SIMOX microstructure

1997 IEEE International SOI Conference Proceedings

Author(s): Datta, R. ; Allen, L.P. ; Chandonnet, R. ; Farley, M. ; Jones, K.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 42 - 43
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634923
Regular:

SIMOX (Separation by IMplantation of OXygen) is one of the leading SOI (silicon an insulator) technologies. SOI materials have received considerable attention for their potential use in deep... View More

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