IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mechanisms of formation of buried-oxide in low-dose SIMOX

1997 IEEE International SOI Conference Proceedings

Author(s): Bagchi, S. ; Krause, S.J. ; Roitman, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 36 - 37
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634920
Regular:

There is increasing interest in low-dose SIMOX as a substrate material. Circuits fabricated on such wafers need to have a high-quality buried-oxide (BOX) with flat, uniform interfaces and density... View More

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