IEEE - Institute of Electrical and Electronics Engineers, Inc. - Silicon-on-diamond MOS-transistors with thermally grown gate oxide

1997 IEEE International SOI Conference Proceedings

Author(s): Edholm, B. ; Vestling, L. ; Bergh, M. ; Tiensuu, S. ; Soderbarg, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 30 - 31
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634917
Regular:

Summary form only given. Self-heating in Silicon-On-Insulator (SOI) devices has during the past years attracted lots of attention and is a problem that remains to be solved. It has,... View More

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