IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dynamic effects in BTG/SOI MOSFETs and circuits due to distributed body resistance

1997 IEEE International SOI Conference Proceedings

Author(s): Workman, G.O. ; Fossum, J.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 28 - 29
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634916
Regular:

Summary form only given. The SOI MOSFET with body tied to gate (BTG) has been proposed for low-voltage CMOS applications. Clearly for DC or quasi-static conditions, the BTG device will have... View More

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