IEEE - Institute of Electrical and Electronics Engineers, Inc. - Local floating body effect in body-grounded SOI nMOSFETs

1997 IEEE International SOI Conference Proceedings

Author(s): Tseng, Y.-C. ; Huang, W.M. ; Ikegami, B. ; Diaz, D.C. ; Ford, J.M. ; Woo, J.C.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 26 - 27
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634915
Regular:

Summary form only given. In this paper, the width dependence of the kink effect and the low frequency noise overshoot in the body grounded H-gate SOI MOSFETs have been studied. These phenomena are... View More

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