IEEE - Institute of Electrical and Electronics Engineers, Inc. - An alternative gate electrode material of fully depleted SOI CMOS for low power applications

1997 IEEE International SOI Conference Proceedings

Author(s): Hsiao, T.C. ; Wang, A.W. ; Saraswat, K. ; Woo, J.C.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 20 - 21
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634912
Regular:

Summary form only given. In this work, a variable gate work-function scheme was proposed, using a p/sup +/ polycrystalline SiGe/Si stack gate. The Ge composition is varied to achieve the desired... View More

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