IEEE - Institute of Electrical and Electronics Engineers, Inc. - Creation of SiGe-based SIMOX structures by low energy oxygen implantation

1997 IEEE International SOI Conference Proceedings

Author(s): Ishikawa, Y. ; Saito, T. ; Shibata, N. ; Fukatsu, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 16 - 17
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634910
Regular:

Summary form only given. An ultra thin, dislocation-free, SiGe virtual substrate on SiO/sub 2/ has been demonstrated as a new class of SOI structure by using low energy oxygen implantation.... View More

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