IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improving ITOX conditions for low defect density and BOX breakdown

1997 IEEE International SOI Conference Proceedings

Author(s): Schwank, J.R. ; Anc, M.J. ; Shaneyfelt, M.R. ; Draper, B.L. ; Meisenheimer, T.L. ; Warren, W.L. ; Vanheusden, K. ; Fleetwood, D.M. ; Schanwald, L.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 14 - 15
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634909
Regular:

A narrow dose-energy process window exists for the formation of high-quality low dose SIMOX layers. Process instabilities require annealing schemes that enlarge the process window to improve... View More

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