IEEE - Institute of Electrical and Electronics Engineers, Inc. - Unique ESD failure mechanisms during negative to WC 13bm tests

Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium

Author(s): Chaine, M. ; Smith, S. ; Anh Bui
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Santa Clara, California, USA, USA
Conference Date: 23 September 1997
Page(s): 346 - 355
ISBN (Paper): 1-878303-69-4
DOI: 10.1109/EOSESD.1997.634262
Regular:

HBM ESD tests on two types of 0.6μm DRAM devices showed that internal circuit or output driver failures would occur after the input or I/O pins were ESD stressed negative with respect to Vcc... View More

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