IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical filamentation in ggMOS protection structures

Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium

Author(s): Vashchenko, V.a. ; Martynov, J.b. ; Sinkevitch, V.f.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Santa Clara, California, USA, USA
Conference Date: 23 September 1997
Page(s): 330 - 336
ISBN (Paper): 1-878303-69-4
DOI: 10.1109/EOSESD.1997.634260
Regular:

On the basis of the two-dimensional numerical simulation the isothermal current instability and filamentation are studied in the grounded gate MOS ESD protection (ggMOS) structures with lightly... View More

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