ESD Assoc - Influence Of Well Profile And Gate Length On The ESD Performance Of A Fully Silicided 0.25/spl mu/m Cmos Technology

Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium

Author(s): K. Bock ; C. Russ ; G. Badenes ; G. Groeseneken ; L. Deferm
Sponsor(s): ESD Assoc.
Publisher: ESD Assoc
Publication Date: 1 January 1997
Conference Location: Santa Clara, California, USA, USA
Conference Date: 23 September 1997
Page Count: 8
Page(s): 308 - 315
ISBN (Paper): 1-878303-69-4
DOI: 10.1109/EOSESD.1997.634258
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