IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Study Of ESD Protection Devices For Input Pins Discharge Characteristics Of Diode, Lateral Bipolar Transistor And Thyristor Under Mm And Hbm Tests

Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium

Author(s): Ishizuka, H. ; Okuyama, K. ; Kubota, K. ; Komuro, M. ; Hara, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Santa Clara, California, USA, USA
Conference Date: 23 September 1997
Page(s): 255 - 262
ISBN (Paper): 1-878303-69-4
DOI: 10.1109/EOSESD.1997.634250
Advertisement