IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel concept for high level overdrive tolerance of GaAs based FETs

Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium

Author(s): Lipka, K.-M. ; Schmid, P. ; Birk, M. ; Demmler, M. ; Schneider, J. ; Splingart, B. ; Tasker, P.J. ; Heinecke, H. ; Kohn, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Santa Clara, California, USA, USA
Conference Date: 23 September 1997
Page(s): 27 - 32
ISBN (Paper): 1-878303-69-4
DOI: 10.1109/EOSESD.1997.634223
Regular:

A novel FET concept, using low temperature grown GaAs as surface passivation and buffer layer material, has been developed to tolerate high levels of input overdrive and to improve ESD resistance.... View More

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