IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate burnout of small signal MODFET's at TLP stress

Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium

Author(s): Vashchenko, V.A. ; Martynov, J.B. ; Sinkevitch, V.F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Santa Clara, California, USA, USA
Conference Date: 23 September 1997
Page(s): 13 - 17
ISBN (Paper): 1-878303-69-4
DOI: 10.1109/EOSESD.1997.634221
Regular:

The gate burnout of GaAlAs/GaAs and pseudomorphic InGaAs channel on GaAs substrate MODFETs have been studied at the gate 10 ns transmission line pulse overstress. The snapback gate-drain pulse... View More

Advertisement