IEEE - Institute of Electrical and Electronics Engineers, Inc. - The total process cost of selective epitaxial growth (SEG) dielectric isolation process as compared to LOCOS

Twenty First IEEE/CPMT International Electronics Manufacturing Technology Symposium Proceedings 1997 IEMT Symposium

Author(s): Hughes, J.G. ; Neudeck, G.W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Austin, TX, USA
Conference Date: 13 October 1997
Page(s): 88 - 92
ISBN (Paper): 0-7803-3929-0
ISSN (Paper): 1089-8190
DOI: 10.1109/IEMT.1997.626882
Regular:

The traditional local oxidation of silicon (LOCOS) device isolation process is widely used in the semiconductor industry. Yet, as the need for below 0.18 microns and smaller devices increases, the... View More

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