IEEE - Institute of Electrical and Electronics Engineers, Inc. - A technique for deriving noise-parameters of millimeter-wave low-noise HEMTs and its application to MMIC LNA design

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

Author(s): Yoshinaga, H. ; Kashiwabara, Y. ; Abe, B. ; Shibata, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: San Francisco, CA, USA, USA
Conference Date: 17 June 1996
Page(s): 149 - 152
ISBN (Paper): 0-7803-3360-8
DOI: 10.1109/MCS.1996.506324
Regular:

An on-wafer tuning method has been applied to derive noise parameters of pseudomorphic HEMTs measured at W-band and K-band. As an application of the method, a K-band MMIC LNA with 1.6 dB NF and... View More

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