IEEE - Institute of Electrical and Electronics Engineers, Inc. - Status of InP HEMT technology for microwave receiver applications

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

Author(s): Smith, P.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: San Francisco, CA, USA, USA
Conference Date: 17 June 1996
Page(s): 129 - 132
ISBN (Paper): 0-7803-3360-8
DOI: 10.1109/MCS.1996.506319
Regular:

The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent... View More

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