IEEE - Institute of Electrical and Electronics Engineers, Inc. - InAlAs/InGaAs/InP-HEMT technologies for high yield analog/digital ICs

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

Author(s): Umeda, Y. ; Enoki, T. ; Osafune, K. ; Ito, H. ; Ishii, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: San Francisco, CA, USA, USA
Conference Date: 17 June 1996
Page(s): 115 - 118
ISBN (Paper): 0-7803-3360-8
DOI: 10.1109/MCS.1996.506316
Regular:

High-yield and high-performance digital/analog ICs have been fabricated using the same InAlAs/InGaAs/InP-HEMT process. SCFL static frequency dividers show a fabrication yield of 63% and... View More

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