IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advances in GaAs HBT power amplifiers for cellular phones and military applications

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

Author(s): Ali, F. ; Gupta, A. ; Higgins, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: San Francisco, CA, USA, USA
Conference Date: 17 June 1996
Page(s): 61 - 66
ISBN (Paper): 0-7803-3360-8
DOI: 10.1109/MCS.1996.506304
Regular:

This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues,... View More

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