IEEE - Institute of Electrical and Electronics Engineers, Inc. - High efficiency power HFETs for low power wireless applications [AlGaAs/InGaAs devices]

IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers

Author(s): Nair, V. ; Tehrani, S. ; Halchin, D. ; Glass, E. ; Fisk, E. ; Majerus, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: San Francisco, CA, USA, USA
Conference Date: 17 June 1996
Page(s): 17 - 20
ISBN (Paper): 0-7803-3360-8
DOI: 10.1109/MCS.1996.506294
Regular:

This paper discusses the development of depletion mode heterojunction FETs (HFETs) for high efficiency power amplifiers. At 850 MHz, a 12 mm HFET achieved power added efficiency of 72% and an... View More

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