IEEE - Institute of Electrical and Electronics Engineers, Inc. - A multiple-valued ferroelectric content-addressable memory

Proceedings of 26th IEEE International Symposium on Multiple-Valued Logic (ISMVL'96)

Author(s): Sheikholeslami, A. ; Gulak, P.G. ; Hanyu, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Santiago de Compostela, Spain, Spain
Conference Date: 29 May 1996
Page(s): 74 - 79
ISBN (Paper): 0-8186-7392-3
ISSN (Paper): 0195-623X
DOI: 10.1109/ISMVL.1996.508339
Regular:

A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile... View More

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