IEEE - Institute of Electrical and Electronics Engineers, Inc. - Read disturb degradation mechanism for source erase flash memories

1996 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): S. Shuto ; S. Yamada ; S. Aritome ; T. Watanabe ; K. Hashimito
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Honolulu, HI, USA, USA
Conference Date: 11 June 1996
Page Count: 2
Page(s): 242 - 243
ISBN (Paper): 0-7803-3342-X
DOI: 10.1109/VLSIT.1996.507865
Regular:

The read disturb degradation caused by source erase is studied. The anomalous Vth shift of about 1.0 V due to electron trapping is observed during read disturb. Vth shift due to electron trapping... View More

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