IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide

1996 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): S. Nakayama ; T. Sakai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Honolulu, HI, USA, USA
Conference Date: 11 June 1996
Page Count: 2
Page(s): 228 - 229
ISBN (Paper): 0-7803-3342-X
DOI: 10.1109/VLSIT.1996.507860
Regular:

The effects of in-situ doped or implanted nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide have been investigated. It is confirmed that the... View More

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