IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate oxide integrity (GOI) of MOS transistors with W/TiN stacked gate

1996 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): D.H. Lee ; K.H. Yeom ; M.H. Cho ; N.S. Kang ; T.E. Shim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Honolulu, HI, USA, USA
Conference Date: 11 June 1996
Page Count: 2
Page(s): 208 - 209
ISBN (Paper): 0-7803-3342-X
DOI: 10.1109/VLSIT.1996.507852
Regular:

With W/TiN stack gate deposited at high temperature, excellent time-dependent dielectric breakdown (TDDB) characteristics of the gate oxide were obtained in MOS capacitors. In the case of negative... View More

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