IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of ion energy distribution on topography dependent charging

1996 Symposium on VLSI Technology. Digest of Technical Papers

Author(s): Shawming Ma ; M. Hane ; J.P. McVittie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Honolulu, HI, USA, USA
Conference Date: 11 June 1996
Page Count: 2
Page(s): 188 - 189
ISBN (Paper): 0-7803-3342-X
DOI: 10.1109/VLSIT.1996.507847
Regular:

A new mode of plasma charging which depends on the aspect ratio has recently been observed during poly-Si etching in the form of notching and oxide damage. The mechanism behind this charging... View More

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