IEEE - Institute of Electrical and Electronics Engineers, Inc. - High-power InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Proceedings of 1994 IEEE International Electron Devices Meeting

Author(s): Nakamura, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1994
Conference Location: San Francisco, CA, USA, USA
Conference Date: 11 December 1994
Page(s): 567 - 570
ISBN (Paper): 0-7803-2111-1
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1994.383328
Regular:

Highly efficient InGaN/AlGaN double-heterostructure blue-light-emitting diodes (LEDs) with an external quantum efficiency of 5.4% were fabricated by codoping Zn and Si into an InGaN active... View More

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