IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fast deposition of a-C:H and a-Si:H using an expanding thermal plasma beam

International Conference on Plasma Sciences (ICOPS)

Author(s): van de Sanden, M.C.M. ; Buuron, A.J.M. ; Gielen, J.W.A. ; Meeusen, G.J. ; Qian, S. ; van Ooij, W.F. ; Schram, D.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Vancouver, BC, Canada, Canada
Conference Date: 7 June 1993
ISBN (Paper): 0-7803-1360-7
ISSN (Paper): 0730-9244
DOI: 10.1109/PLASMA.1993.593612
Regular:

Summary form only given. A fast deposition method, utilizing a thermal plasma which expands into a vacuum vessel, has been used to deposit amorphous hydrogenated silicon and carbon layers (a-Si:H... View More

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