IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design of high power-addecd efficiency FET amplifiers operating with very low drain bias voltages for use in mobile telephones at 1.7 GHz

Author(s): Dietsche, S. ; Duvanaud, C. ; Pataut, G. ; Obregon, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1993
Conference Location: Madrid, Spain, Spain
Conference Date: 6 September 1993
Page(s): 252 - 254
DOI: 10.1109/EUMA.1993.336858
Regular:

Two single-stage GaAs class F power amplifiers with very high efficiency at low drain bias voltages have been designed and tested at 1.7 GHz. The first power amplifier was designed to achieve... View More

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