IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single and multiple proton-induced NIEL events in silicon

Proceedings of 2nd European Conference Radiations and their Effects on Devices and Systems (RADECS 93)

Author(s): Chen, L. ; McNulty, P.J. ; Abdel-Kader, W.G. ; Miller, T.L. ; Thompson, D.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: St. Malo, France
Conference Date: 13 September 1993
Page(s): 526 - 531
ISBN (Paper): 0-7803-1793-9
DOI: 10.1109/RADECS.1993.316523
Regular:

Computer simulations of proton-induced spallation reactions predict the deposition of as much as 200 KeV of non ionizing energy loss (NIEL) within the active regions of CCD pixels as the result of... View More

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