IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of cell structure on the SEU sensitivity of a SRAM

Proceedings of 2nd European Conference Radiations and their Effects on Devices and Systems (RADECS 93)

Author(s): Bion, T. ; Corbiere, T. ; Musseau, O.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: St. Malo, France
Conference Date: 13 September 1993
Page(s): 560 - 562
ISBN (Paper): 0-7803-1793-9
DOI: 10.1109/RADECS.1993.316520
Regular:

We have experimentally studied the single event upset sensitivity of CMOS on an epilayer 64 Kbit SRAM test vehicle. The device cross sections have been measured using accelerator beams and we have... View More

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