IEEE - Institute of Electrical and Electronics Engineers, Inc. - Heavy ion sensitivity of a SRAM in SOI bulk-like technology

Proceedings of 2nd European Conference Radiations and their Effects on Devices and Systems (RADECS 93)

Author(s): Ferlet-Cavrois, V. ; Musseau, O. ; Leray, J.L. ; Coic, Y.M. ; Pelloie, J.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: St. Malo, France
Conference Date: 13 September 1993
Page(s): 571 - 576
ISBN (Paper): 0-7803-1793-9
DOI: 10.1109/RADECS.1993.316518
Regular:

The sensitivity to heavy ions of a thick SOI technology compatible with bulk design rules is studied in this paper. A model is built, relying on two basic phenomena gathered in this thick SOI... View More

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