IEEE - Institute of Electrical and Electronics Engineers, Inc. - The effect of DIBL on the performance of InP MESFETs using two-dimensional analytical model

Proceedings of 36th Midwest Symposium on Circuits and Systems

Author(s): Badr, K.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Detroit, MI, USA
Conference Date: 16 August 1993
ISBN (Paper): 0-7803-1760-2
DOI: 10.1109/MWSCAS.1993.342944
Regular:

A two-dimensional analytic model is developed to study drain induced barrier lowering (DIBL) on the performance of indium phosphite (InP) MESFETs operating in or near subthreshold regime. This... View More

Advertisement