IEEE - Institute of Electrical and Electronics Engineers, Inc. - 200/spl deg/C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 /spl mu/m thick SOI

Proceedings of IEEE International Electron Devices Meeting

Author(s): Nakagawa, A. ; Yamaguchi, Y. ; Matsudai, T. ; Yasuhara, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Washington, DC, USA
Conference Date: 5 December 1993
Page(s): 687 - 690
ISBN (Paper): 0-7803-1450-6
ISSN (Paper): 0163-1918
DOI: 10.1109/IEDM.1993.347219
Regular:

This paper experimentally verifies that high-voltage lateral IGBTs fabricated on SOI of less than 5 /spl mu/m exhibit high switching speed without the need for any special device design. This... View More

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