IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of base profiles on the forward transit time of the bipolar transistors in BiCMOS circuits

Proceedings of 1993 10th Biennial University/Government/ Industry Microelectronics Symposium

Author(s): Yuan, J.-S. ; Yeh, C.-S. ; Gadepally, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Research Triangle Park, NC, USA
Conference Date: 18 May 1993
Page(s): 120 - 125
ISBN (Paper): 0-7803-0990-1
ISSN (Paper): 0749-6877
DOI: 10.1109/UGIM.1993.297023
Regular:

The effect of the base doping profile on the base and the emitter transit time of bipolar transistors (BJTs) in BiCMOS circuits is presented. Comparing the uniform base profile with the... View More

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