IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new model for the p-n junction space charge region capacitance

Proceedings of 1993 10th Biennial University/Government/ Industry Microelectronics Symposium

Author(s): Van Halen, P. ; Habib, M.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1993
Conference Location: Research Triangle Park, NC, USA
Conference Date: 18 May 1993
Page(s): 126 - 130
ISBN (Paper): 0-7803-0990-1
ISSN (Paper): 0749-6877
DOI: 10.1109/UGIM.1993.297022
Regular:

Depletion-approximation-based junction capacitance versus voltage characteristics are adequate for reverse bias but, contrary to experiments and computer simulations, predict an infinite... View More

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